Numerical Simulation of Silicide Growth Near Insulator with Thin Oxide Films Deposition

Abstract

Silicide films have received much recent attention because of their practical applications VLSI technologies. Titanium silicide is among the most common silicide employed in semiconductor industry because it can be self-aligned, has low resistivity and is stable a temperatures consistent with device fabrication processes. However, with scaling to dimensions and polycide/salicide technology development, computer simulation and mod that could handle complicated geometrical movements of multi-layer materials, coupled with defects injection and impurity redistribution at the moving interfaces or inside the layers are required for the development of improved silicide processes. Hence, this sub based on numerical simulation of silicide growth near an insulator in tin oxide COSMOL Multiphysics software. The result showed that at constant temperature change 0.0513°C to 0.753°C in the time range of 0-30sec, 0-60sec. 0-240sec and 0-600.