Please use this identifier to cite or link to this item: http://irepo.futminna.edu.ng:8080/jspui/handle/123456789/13601
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dc.contributor.authorMohammed, Abubakar Saddiq-
dc.contributor.authorKazarkin, B.-
dc.contributor.authorStsiapanau, A.-
dc.contributor.authorZhuk, S.-
dc.contributor.authorSatskevich, Y.-
dc.contributor.authorSmirnov, A.-
dc.date.accessioned2021-08-17T06:49:24Z-
dc.date.available2021-08-17T06:49:24Z-
dc.date.issued2014-
dc.identifier.citationAbubakar Saddiq Mohammeden_US
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1742-6596/541/1/012027/pdf.-
dc.identifier.urihttp://repository.futminna.edu.ng:8080/jspui/handle/123456789/13601-
dc.description.abstractWe report a transparent conductor based on Al nanomesh, which was fabricated through Al anodization and etching processes. The Al anodization was performed at low temperature condition to slow down the anodization rate to achieve the well-controlled thickness of an Al nanomesh. By careful controlling of the anodization process, we can fabricate Al nanomesh transparent conductors with different sheet resistance and optical transparency in the visible spectrum range. We shall show that Al nanomesh transparent conductor is a strong contender for a transparent conductor dominated by ITO.en_US
dc.language.isoenen_US
dc.publisherIOP Publishingen_US
dc.relation.ispartofseriesSeries 541 (2014) 012027;-
dc.subjectTransparent conductoren_US
dc.subjectAluminium Nanomeshen_US
dc.subjectAnodizationen_US
dc.subjectITOen_US
dc.titleTransparent Conductor based on Aluminium Nanomeshen_US
dc.title.alternative1st International School and Conference ''Saint–Petersburg OPEN 2014'' on Optoelectronics, Photonics, Engineering and Nanostructuresen_US
dc.typeArticleen_US
Appears in Collections:Telecommunication Engineering

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